BDC01DRL1G Overview

This device has a DC current gain of 40 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.A maximum collector current of 500mA volts can be achieved.

BDC01DRL1G Features

the DC current gain for this device is 40 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz

BDC01DRL1G Applications

There are a lot of ON Semiconductor BDC01DRL1G applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter