BDV64B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDV64B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-218-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
125W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-10A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
125W
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
0.1MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
BDV64B Product Details
BDV64B Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 5A 4V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 0.1MHz is present in the part.During maximum operation, collector current can be as low as 10A volts.
BDV64B Features
the DC current gain for this device is 1000 @ 5A 4V the vce saturation(Max) is 2V @ 20mA, 5A the emitter base voltage is kept at 5V the current rating of this device is -10A a transition frequency of 0.1MHz
BDV64B Applications
There are a lot of ON Semiconductor BDV64B applications of single BJT transistors.