2N5088RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100μA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.In this part, there is a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.
2N5088RLRAG Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
a transition frequency of 50MHz
2N5088RLRAG Applications
There are a lot of Rochester Electronics, LLC 2N5088RLRAG applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
