2N5088RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N5088RLRAG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Additional Feature
LOW NOISE
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
50mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
2N5088RLRAG Product Details
2N5088RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100μA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.In this part, there is a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.
2N5088RLRAG Features
the DC current gain for this device is 300 @ 100μA 5V the vce saturation(Max) is 500mV @ 1mA, 10mA a transition frequency of 50MHz
2N5088RLRAG Applications
There are a lot of Rochester Electronics, LLC 2N5088RLRAG applications of single BJT transistors.