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BDW93A

BDW93A

BDW93A

ON Semiconductor

BDW93A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDW93A Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDW93
Power - Max 80W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 12A
BDW93A Product Details

BDW93A Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 5A 3V.When VCE saturation is 3V @ 100mA, 10A, transistor means Ic has reached transistors maximum value (saturated).TO-220-3 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 60V.

BDW93A Features


the DC current gain for this device is 750 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the supplier device package of TO-220-3

BDW93A Applications


There are a lot of ON Semiconductor BDW93A applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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