BDW93A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW93A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDW93
Power - Max
80W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 5A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
12A
BDW93A Product Details
BDW93A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 5A 3V.When VCE saturation is 3V @ 100mA, 10A, transistor means Ic has reached transistors maximum value (saturated).TO-220-3 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 60V.
BDW93A Features
the DC current gain for this device is 750 @ 5A 3V the vce saturation(Max) is 3V @ 100mA, 10A the supplier device package of TO-220-3
BDW93A Applications
There are a lot of ON Semiconductor BDW93A applications of single BJT transistors.