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MMBT3906T-7-F

MMBT3906T-7-F

MMBT3906T-7-F

Diodes Incorporated

MMBT3906T-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT3906T-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT3906
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -400mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -200mA
Turn On Time-Max (ton) 70ns
Height 750μm
Length 1.6mm
Width 800μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04707 $0.14121
6,000 $0.04140 $0.2484
15,000 $0.03573 $0.53595
30,000 $0.03384 $1.0152
75,000 $0.03195 $2.39625
150,000 $0.02880 $4.32
MMBT3906T-7-F Product Details

MMBT3906T-7-F Overview


This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -400mV allows maximum design flexibility.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.The part has a transition frequency of 250MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 200mA volts at its maximum.

MMBT3906T-7-F Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz

MMBT3906T-7-F Applications


There are a lot of Diodes Incorporated MMBT3906T-7-F applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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