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BC846BLP4-7B

BC846BLP4-7B

BC846BLP4-7B

Diodes Incorporated

BC846BLP4-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC846BLP4-7B Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC846
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Power - Max 410mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 220mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Height 350μm
Length 1.05mm
Width 650μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.04347 $0.4347
30,000 $0.04117 $1.2351
50,000 $0.03887 $1.9435
100,000 $0.03504 $3.504
BC846BLP4-7B Product Details

BC846BLP4-7B Overview


DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 220mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.As a result, it can handle voltages as low as 65V volts.When collector current reaches its maximum, it can reach 100mA volts.

BC846BLP4-7B Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC846BLP4-7B Applications


There are a lot of Diodes Incorporated BC846BLP4-7B applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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