BDX54TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX54TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDX54
Power - Max
60W
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
8A
BDX54TU Product Details
BDX54TU Overview
In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 12mA, 3A.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BDX54TU Features
the DC current gain for this device is 750 @ 3A 3V the vce saturation(Max) is 2V @ 12mA, 3A
BDX54TU Applications
There are a lot of ON Semiconductor BDX54TU applications of single BJT transistors.