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BDX54TU

BDX54TU

BDX54TU

ON Semiconductor

BDX54TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDX54TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDX54
Power - Max 60W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 8A
In-Stock:1312 items

BDX54TU Product Details

BDX54TU Overview


In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 12mA, 3A.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BDX54TU Features


the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2V @ 12mA, 3A

BDX54TU Applications


There are a lot of ON Semiconductor BDX54TU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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