BSP16T1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BSP16T1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BSP16
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Gain Bandwidth Product
15MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
15MHz
Collector Emitter Saturation Voltage
-2V
Collector Base Voltage (VCBO)
-350V
Emitter Base Voltage (VEBO)
6V
hFE Min
30
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.060640
$0.06064
500
$0.044588
$22.294
1000
$0.037157
$37.157
2000
$0.034089
$68.178
5000
$0.031859
$159.295
10000
$0.029636
$296.36
15000
$0.028662
$429.93
50000
$0.028182
$1409.1
BSP16T1 Product Details
BSP16T1 Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 2V @ 5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).The part has a transition frequency of 15MHz.A maximum collector current of 100mA volts is possible.
BSP16T1 Features
the DC current gain for this device is 30 @ 50mA 10V a collector emitter saturation voltage of -2V the vce saturation(Max) is 2V @ 5mA, 50mA the emitter base voltage is kept at 6V the current rating of this device is -1A a transition frequency of 15MHz
BSP16T1 Applications
There are a lot of ON Semiconductor BSP16T1 applications of single BJT transistors.