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BF423ZL1G

BF423ZL1G

BF423ZL1G

ON Semiconductor

BF423ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BF423ZL1G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation 830mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -50mA
Frequency 60MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BF423
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 830mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 250V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 250V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.047219 $0.047219
500 $0.034720 $17.36
1000 $0.028933 $28.933
2000 $0.026544 $53.088
5000 $0.024808 $124.04
10000 $0.023077 $230.77
15000 $0.022318 $334.77
50000 $0.021945 $1097.25
BF423ZL1G Product Details

BF423ZL1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.60MHz is present in the transition frequency.This device can take an input voltage of 250V volts before it breaks down.Collector current can be as low as 500mA volts at its maximum.

BF423ZL1G Features


the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 60MHz

BF423ZL1G Applications


There are a lot of ON Semiconductor BF423ZL1G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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