BF423ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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BF423ZL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
-250V
Max Power Dissipation
830mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-50mA
Frequency
60MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BF423
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
830mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 25mA 20V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
250V
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
250V
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.047219
$0.047219
500
$0.034720
$17.36
1000
$0.028933
$28.933
2000
$0.026544
$53.088
5000
$0.024808
$124.04
10000
$0.023077
$230.77
15000
$0.022318
$334.77
50000
$0.021945
$1097.25
BF423ZL1G Product Details
BF423ZL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.60MHz is present in the transition frequency.This device can take an input voltage of 250V volts before it breaks down.Collector current can be as low as 500mA volts at its maximum.
BF423ZL1G Features
the DC current gain for this device is 50 @ 25mA 20V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 5V the current rating of this device is -50mA a transition frequency of 60MHz
BF423ZL1G Applications
There are a lot of ON Semiconductor BF423ZL1G applications of single BJT transistors.