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MJE15029

MJE15029

MJE15029

ON Semiconductor

MJE15029 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE15029 Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 120V
Max Power Dissipation 50W
Current Rating 8A
Frequency 30MHz
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 50W
Power - Max 50W
Gain Bandwidth Product 30MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 120V
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 8A
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MJE15029 Product Details

MJE15029 Overview


In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.This product comes in a TO-220AB device package from the supplier.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.During maximum operation, collector current can be as low as 8A volts.

MJE15029 Features


the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
the supplier device package of TO-220AB

MJE15029 Applications


There are a lot of ON Semiconductor MJE15029 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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