MJE15029 Overview
In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.This product comes in a TO-220AB device package from the supplier.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.During maximum operation, collector current can be as low as 8A volts.
MJE15029 Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
the supplier device package of TO-220AB
MJE15029 Applications
There are a lot of ON Semiconductor MJE15029 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
