BSP16T1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.As it features a collector emitter saturation voltage of -2V, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 6V to gain high efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 15MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 100mA volts can be achieved.

BSP16T1G Features

the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -1A
a transition frequency of 15MHz

BSP16T1G Applications

There are a lot of ON Semiconductor BSP16T1G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver