BCX5116TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A transition frequency of 150MHz is present in the part.A breakdown input voltage of 45V volts can be used.When collector current reaches its maximum, it can reach 1A volts.
BCX5116TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
BCX5116TA Applications
There are a lot of Diodes Incorporated BCX5116TA applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
