SBCP56-16T1G Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.There is a transition frequency of 130MHz in the part.Breakdown input voltage is 80V volts.The maximum collector current is 1A volts.
SBCP56-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56-16T1G Applications
There are a lot of ON Semiconductor SBCP56-16T1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
