JAN2N3501UB Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
JAN2N3501UB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
JAN2N3501UB Applications
There are a lot of Microsemi Corporation JAN2N3501UB applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
