BSS100 Description

This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. It has been specifically designed to minimize on-state resistance and offer enhanced switching performance in this extremely high density technology. This product is best suited for low voltage, low current uses like power MOSFET gate drivers, small servo motor controls, and other switching applications.

BSS100 Features

• BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V.

• BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V

• High density cell design for extremely low RDS(ON).

• Voltage controlled small signal switch.

• Rugged and reliable

BSS100 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial