ZXTN2031FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN2031FTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
50V
Max Power Dissipation
1.2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Frequency
125MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN2031
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Transistor Application
SWITCHING
Gain Bandwidth Product
125MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
170mV @ 250mA, 5A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
170mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
4.5A
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.417878
$0.417878
10
$0.394224
$3.94224
100
$0.371910
$37.191
500
$0.350858
$175.429
1000
$0.330998
$330.998
ZXTN2031FTA Product Details
ZXTN2031FTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of 170mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 170mV @ 250mA, 5A.Maintaining the continuous collector voltage at 4.5A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.This device can take an input voltage of 50V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTN2031FTA Features
the DC current gain for this device is 200 @ 500mA 2V a collector emitter saturation voltage of 170mV the vce saturation(Max) is 170mV @ 250mA, 5A the emitter base voltage is kept at 7V the current rating of this device is 5A a transition frequency of 125MHz
ZXTN2031FTA Applications
There are a lot of Diodes Incorporated ZXTN2031FTA applications of single BJT transistors.