BCX6816H6327XTSA1 Overview

In this device, the DC current gain is 100 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Collector current can be as low as 1A volts at its maximum.

BCX6816H6327XTSA1 Features

the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V

BCX6816H6327XTSA1 Applications

There are a lot of Infineon Technologies BCX6816H6327XTSA1 applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver