D44C8 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
D44C8 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
CONSULT SALES OFFICE (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
60W
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 2A 1V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
100V
Max Breakdown Voltage
60V
Frequency - Transition
40MHz
hFE Min
20
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.50000
$0.5
500
$0.495
$247.5
1000
$0.49
$490
1500
$0.485
$727.5
2000
$0.48
$960
2500
$0.475
$1187.5
D44C8 Product Details
D44C8 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 2A 1V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 1A.An input voltage of 60V volts is the breakdown voltage.A maximum collector current of 4A volts is possible.
D44C8 Features
the DC current gain for this device is 20 @ 2A 1V the vce saturation(Max) is 500mV @ 50mA, 1A
D44C8 Applications
There are a lot of ON Semiconductor D44C8 applications of single BJT transistors.