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D44C8

D44C8

D44C8

ON Semiconductor

D44C8 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

D44C8 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 6 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 60W
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 2A 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 100V
Max Breakdown Voltage 60V
Frequency - Transition 40MHz
hFE Min 20
Height 6.35mm
Length 6.35mm
Width 6.35mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.50000 $0.5
500 $0.495 $247.5
1000 $0.49 $490
1500 $0.485 $727.5
2000 $0.48 $960
2500 $0.475 $1187.5
D44C8 Product Details

D44C8 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 2A 1V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 1A.An input voltage of 60V volts is the breakdown voltage.A maximum collector current of 4A volts is possible.

D44C8 Features


the DC current gain for this device is 20 @ 2A 1V
the vce saturation(Max) is 500mV @ 50mA, 1A

D44C8 Applications


There are a lot of ON Semiconductor D44C8 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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