FDMS9620S

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Manufacturer part number:FDMS9620S

Manufacturer:ON Semiconductor

Description:FDMS9620S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS9620S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	228mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	32MOhm
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory	FET General Purpose Power
Max Power Dissipation	2.5W
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Power - Max	1W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21.5m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.5A 10A
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	13ns
Fall Time (Typ)	7 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.5A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	5mm
Width	6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free