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SI7121ADN-T1-GE3

SI7121ADN-T1-GE3

SI7121ADN-T1-GE3

Vishay Siliconix

P-Channel Tape & Reel (TR) 15m Ω @ 7A, 10V ±25V 1870pF @ 15V 50nC @ 10V 30V PowerPAK® 1212-8

SOT-23

SI7121ADN-T1-GE3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 12.5mOhm
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7121
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 27.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 34ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) -18A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 50A
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.937549 $0.937549
10 $0.884480 $8.8448
100 $0.834415 $83.4415
500 $0.787184 $393.592
1000 $0.742626 $742.626
SI7121ADN-T1-GE3 Product Details

SI7121ADN-T1-GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1870pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -18A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 50A.A turn-on delay time of 38 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -2.5V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI7121ADN-T1-GE3 Features


a continuous drain current (ID) of -18A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 50A.
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)


SI7121ADN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7121ADN-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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