FCA20N60-F109

new-10%

Manufacturer part number:FCA20N60-F109

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 20A TO-3P

Case Package:SOT-23

Datasheet:FCA20N60-F109 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 day ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	190MOhm
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Base Part Number	FCA20N60
Number of Elements	1
Power Dissipation-Max	208W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Turn On Delay Time	62 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	98nC @ 10V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	230 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	690 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free