APT10086BVFRG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Microsemi Corporation stock available on our website
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APT10086BVFRG Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 [B]
Packaging
Tube
Published
1997
Series
POWER MOS V®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
1kV
Max Power Dissipation
520W
Technology
MOSFET (Metal Oxide)
Current Rating
13A
Number of Elements
1
Power Dissipation
370W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
860mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
4440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
275nC @ 10V
Rise Time
10ns
Drain to Source Voltage (Vdss)
1000V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
13A
Gate to Source Voltage (Vgs)
30V
Input Capacitance
9nF
Rds On Max
150 mΩ
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$21.25000
$21.25
500
$21.0375
$10518.75
1000
$20.825
$20825
1500
$20.6125
$30918.75
2000
$20.4
$40800
2500
$20.1875
$50468.75
APT10086BVFRG Product Details
APT10086BVFRG Description
The APT10086BVFRG is a POWER MOS V® FREDFET. A new generation of high voltage N-Channel enhancement mode power MOSFETs is called Power MOS V TO-247®. With this innovative technology, the JFET effect is reduced, packing density is increased, and on-resistance is decreased. Through improved gate arrangement, Power MOS V® also delivers quicker switching rates.