Name: FCH040N65S3-F155
Brand: ON Semiconductor
SKU: FCH040N65S3-F155
Price: 10.24000 USD
Availability: InStock

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FCH040N65S3-F155

Manufacturer part number:FCH040N65S3-F155

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 32.5A, 10V ±30V 4740pF @ 400V 136nC @ 10V 650V TO-247-3

Case Package:SOT-23

Datasheet:FCH040N65S3-F155 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.39g
Operating Temperature	-55°C~150°C
Packaging	Tube
Series	SuperFET® III
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	417W Tc
Element Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40m Ω @ 32.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 6.5mA
Input Capacitance (Ciss) (Max) @ Vds	4740pF @ 400V
Current - Continuous Drain (Id) @ 25°C	65A Tc
Gate Charge (Qg) (Max) @ Vgs	136nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
RoHS Status	RoHS Compliant

FCH040N65S3-F155 Product Details

FCH040N65S3-F155 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4740pF @ 400V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.