FCH041N60E

new-10%

Manufacturer part number:FCH041N60E

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 41m Ω @ 39A, 10V ±20V 13700pF @ 100V 380nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:FCH041N60E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	2
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperFET® II
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	592W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	592W
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	41m Ω @ 39A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13700pF @ 100V
Current - Continuous Drain (Id) @ 25°C	77A Tc
Gate Charge (Qg) (Max) @ Vgs	380nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	85 ns
Turn-Off Delay Time	320 ns
Continuous Drain Current (ID)	77A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Height	20.82mm
Length	15.87mm
Width	4.82mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free