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FCP380N60E

FCP380N60E

FCP380N60E

ON Semiconductor

FCP380N60E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCP380N60E Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 106W Tc
Element Configuration Single
Power Dissipation 106W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.2A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 10.2A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.798816 $0.798816
10 $0.753600 $7.536
100 $0.710943 $71.0943
500 $0.670701 $335.3505
1000 $0.632737 $632.737
FCP380N60E Product Details

FCP380N60E Overview


A device's maximal input capacitance is 1770pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.Its continuous drain current is 10.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 64 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

FCP380N60E Features


a continuous drain current (ID) of 10.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 64 ns
a threshold voltage of 2.5V

FCP380N60E Applications


There are a lot of ON Semiconductor FCP380N60E applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Motor drives and Uninterruptible Power Supplies
  • Industrial Power Supplies
  • Micro Solar Inverter
  • DC-to-DC converters
  • Lighting, Server, Telecom and UPS.
  • Motor Drives and Uninterruptible Power Supples
  • DC/DC converters

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