SI3483CDV-T1-GE3

new-10%

Manufacturer part number:SI3483CDV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 8A 6-TSOP

Case Package:SOT-23

Datasheet:SI3483CDV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Ta 4.2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 6.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	-6.1A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.034Ohm
Drain to Source Breakdown Voltage	-30V
Nominal Vgs	-3 V
Height	1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free