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SI3483CDV-T1-GE3

SI3483CDV-T1-GE3

SI3483CDV-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 8A 6-TSOP

SOT-23

SI3483CDV-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2017
Series TrenchFET®
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 4.2W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 6.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -6.1A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage -30V
Nominal Vgs -3 V
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7277 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.553709$0.553709
10$0.522367$5.22367
100$0.492799$49.2799
500$0.464905$232.4525
1000$0.438590$438.59

About SI3483CDV-T1-GE3

The SI3483CDV-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 30V 8A 6-TSOP.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI3483CDV-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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