STP9NK50ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STP9NK50ZFP Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
850MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP9N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
850m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
910pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.2A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
7.2A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
28.8A
Height
9.3mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.92000
$1.92
50
$1.54560
$77.28
100
$1.39100
$139.1
500
$1.08186
$540.93
STP9NK50ZFP Product Details
STP9NK50ZFP Description
The SuperMESH? series is obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.