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CSD22204WT

CSD22204WT

CSD22204WT

Texas Instruments

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 9.9m Ω @ 2A, 4.5V -6V 1130pF @ 4V 24.6nC @ 4.5V 8V 9-UFBGA, DSBGA

SOT-23

CSD22204WT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 9-UFBGA, DSBGA
Number of Pins 9
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal FormBALL
Base Part Number CSD22204
Number of Elements 1
Power Dissipation-Max 1.7W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Turn On Delay Time58 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.9m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 4V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 24.6nC @ 4.5V
Rise Time600ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) -6V
Fall Time (Typ) 2.29 μs
Turn-Off Delay Time 3.45 μs
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 8V
Feedback Cap-Max (Crss) 265 pF
Height 625μm
Length 1.75mm
Width 1.75mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6608 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$0.42536$106.34
500$0.36200$181
750$0.31675$237.5625

CSD22204WT Product Details

CSD22204WT Overview


The maximum input capacitance of this device is 1130pF @ 4V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.As shown in the table below, the drain current of this device is 5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 3.45 μs.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 58 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 8V.The drain-to-source voltage (Vdss) of this transistor needs to be at 8V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

CSD22204WT Features


a continuous drain current (ID) of 5A
the turn-off delay time is 3.45 μs
based on its rated peak drain current 80A.
a 8V drain to source voltage (Vdss)


CSD22204WT Applications


There are a lot of Texas Instruments
CSD22204WT applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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