FDC602P

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FDC602P

Manufacturer part number:FDC602P

Manufacturer:ON Semiconductor

Description:FDC602P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDC602P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	35MOhm
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-5.5A
Number of Elements	1
Number of Channels	1
Voltage	20V
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Current	55A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1456pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5.5A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	-5.5A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-900 mV
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free