FDC602P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC602P Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
35MOhm
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-5.5A
Number of Elements
1
Number of Channels
1
Voltage
20V
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Current
55A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
15 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
35m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1456pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5.5A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
57 ns
Continuous Drain Current (ID)
-5.5A
Threshold Voltage
-900mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
-20V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-900 mV
Height
1.1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.18516
$0.55548
6,000
$0.17322
$1.03932
15,000
$0.16127
$2.41905
30,000
$0.15291
$4.5873
FDC602P Product Details
FDC602P Description
FDC602P is a type of P-channel PowerTrench? MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to provide low on-state resistance while maintaining a fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for power management applications with a wide range of gate drive voltage.