SI7922DN-T1-E3

new-10%

Manufacturer part number:SI7922DN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 100V 1.8A 1212-8

Case Package:SOT-23

Datasheet:SI7922DN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	195mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Max Power Dissipation	1.3W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI7922
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.6W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	195m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	1.8A
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Rise Time	11ns
Fall Time (Typ)	11 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	25A
Threshold Voltage	3.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	10A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	3.5 V
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free