FDC6306P    Description

  These P-channel 2.5V MOSFET are manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.

FDC6306P    Features

-1.9 A, -20 V

RDS(on) = 0.170 |? @ VGS = -4.5 V

RDS(on) = 0.250 |? @ VGS = -2.5 V

Low gate charge (2.3nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

FDC6306P        Applications

This product is general usage and suitable for many different applications.