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TSM250NB06DCR RLG

TSM250NB06DCR RLG

TSM250NB06DCR RLG

Taiwan Semiconductor Corporation

DUAL N-CHANNEL POWER MOSFET 60V,

SOT-23

TSM250NB06DCR RLG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFN (5x6)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W Ta 48W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1461pF @ 30V
Current - Continuous Drain (Id) @ 25°C 7A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 60V
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.159000 $2.159
10 $2.036792 $20.36792
100 $1.921502 $192.1502
500 $1.812738 $906.369
1000 $1.710130 $1710.13

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