FDD13AN06A0

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FDD13AN06A0

Manufacturer part number:FDD13AN06A0

Manufacturer:ON Semiconductor

Description:FDD13AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD13AN06A0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	9.9A
Base Part Number	FDD13AN06
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	115W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	115W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.9A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	77ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Avalanche Energy Rating (Eas)	56 mJ
Nominal Vgs	4 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free