FDD5810

new-10%

Manufacturer part number:FDD5810

Manufacturer:ON Semiconductor

Description:FDD5810 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD5810 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	35A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	72W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	88W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 32A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.4A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	75ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	34 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	37A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.4A
Drain-source On Resistance-Max	0.022Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	45 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free