SISA01DN-T1-GE3 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3490pF @ 15V.This device has a continuous drain current (ID) of [-22.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-30V, the drain-source breakdown voltage is -30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 39 ns.MOSFETs have 4.1mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SISA01DN-T1-GE3 Features

a continuous drain current (ID) of -22.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 4.1mOhm
a 30V drain to source voltage (Vdss)

SISA01DN-T1-GE3 Applications

There are a lot of Vishay Siliconix
SISA01DN-T1-GE3 applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit