FDD8444L

new-10%

Manufacturer part number:FDD8444L

Manufacturer:ON Semiconductor

Description:FDD8444L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD8444L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	153W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	153W
Case Connection	DRAIN
Turn On Delay Time	18.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 5V
Rise Time	46ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19.2 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	16A
Drain-source On Resistance-Max	0.0065Ohm
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	295 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant