FDG6308P  Description

  This P-channel 1.8V dedicated MOSFET uses advanced low-voltage power trench technology. It has been optimized for battery power management applications.

FDG6308P    Features

–0.6 A, –20 V.

RDS(ON)= 0.40Ω @ VGS = –4.5 V

RDS(ON) = 0.55Ω @ VGS = –2.5 V

RDS(ON) = 0.80Ω @ VGS = –1.8 V

Low gate charge

High performance trench technology for extremelylow RDS(ON)

Compact industry standard SC70-6 surface mountpackage

FDG6308P     Applications

This product is general usage and suitable for many different applications.