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SSM6N17FU(TE85L,F)

SSM6N17FU(TE85L,F)

SSM6N17FU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET, NN CH, 0.1A, 50V, SC70

SOT-23

SSM6N17FU(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Subcategory FET General Purpose Powers
Max Power Dissipation 200mW
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 100 ns
Power - Max 200mW Ta
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 20 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 1μA
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 3V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 100mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 7V
Drain Current-Max (Abs) (ID) 0.1A
Dual Supply Voltage 50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 1.5 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.51000 $0.51
500 $0.5049 $252.45
1000 $0.4998 $499.8
1500 $0.4947 $742.05
2000 $0.4896 $979.2
2500 $0.4845 $1211.25

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