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FDJ128N

FDJ128N

FDJ128N

ON Semiconductor

FDJ128N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDJ128N Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC75-6 FLMP
Number of Pins 75
Supplier Device Package SC75-6 FLMP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 5.5A
Power Dissipation-Max 1.6W Ta
Power Dissipation 1.6W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 543pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 543pF
Drain to Source Resistance 35mOhm
Rds On Max 35 mΩ
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.071521 $0.071521
500 $0.052589 $26.2945
1000 $0.043824 $43.824
2000 $0.040205 $80.41
5000 $0.037575 $187.875
10000 $0.034953 $349.53
15000 $0.033804 $507.06
50000 $0.033239 $1661.95
FDJ128N Product Details

Description


The FDJ128N is an N-Channel 2.5 Vgs Specified PowerTrench? MOSFET. The sophisticated low voltage PowerTrench technology from Fairchild is used in this N-Channel -2.5V specified MOSFET. For battery power management applications, it has been optimized.



Features


  • High performance trench technology for extremely low RDS(ON)

  • Compact industry standard SC75-6 surface mount package

  • 5.5 A, 20 V. RDS(ON) = 35 m? @ VGS = 4.5 V

 RDS(ON) = 51 m? @ VGS = 2.5 V

  • Low gate charge

  • Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that



Applications


  • Battery management

  • Automotive electronics

  • As switching devices in electronic control units

  • As power converters in modern electric vehicles

  • Control conductivity


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