Description
The FDMA410NZ is a Single N-Channel 1.5V Specified PowerTrench? MOSFET. This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on a special MicroFET leadframe. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly all MOSFETs fall under the umbrella of a metal-insulator-semiconductor field-effect transistor, or MISFET. IGFET, or insulated-gate field-effect transistor, is another equivalent term.
Features
HBM ESD protection level > 2.5 kV
Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A
Max rDS(on) = 29 m? at VGS = 2.5 V, ID = 8.0 A
Max rDS(on) = 36 m? at VGS = 1.8 V, ID = 4.0 A
Max rDS(on) = 50 m? at VGS = 1.5 V, ID = 2.0 A
Applications
Li-lon Battery Pack
Baseband Switch
Load Switch
DC-DC Conversion
Automotive Electronics
