TK10V60W,LVQ

new-10%

Manufacturer part number:TK10V60W,LVQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A

Case Package:SOT-23

Datasheet:TK10V60W,LVQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-VSFN Exposed Pad
Number of Pins	5
Supplier Device Package	4-DFN-EP (8x8)
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	88.3W Tc
Turn On Delay Time	45 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 300V
Current - Continuous Drain (Id) @ 25°C	9.7A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	22ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	9.7A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	700pF
FET Feature	Super Junction
Drain to Source Resistance	380mOhm
Rds On Max	380 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant