IPP70N10S3L12AKSA1

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Manufacturer part number:IPP70N10S3L12AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 70A TO220-3

Case Package:SOT-23

Datasheet:IPP70N10S3L12AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12.1m Ω @ 70A, 10V
Vgs(th) (Max) @ Id	2.4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds	5550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	70A
Drain-source On Resistance-Max	0.0123Ohm
Pulsed Drain Current-Max (IDM)	280A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	154 mJ
RoHS Status	ROHS3 Compliant