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SIHG70N60EF-GE3

SIHG70N60EF-GE3

SIHG70N60EF-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 38m Ω @ 35A, 10V ±30V 7500pF @ 100V 380nC @ 10V 600V TO-247-3

SOT-23

SIHG70N60EF-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 520W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 70A
JEDEC-95 Code TO-247AC
Drain-source On Resistance-Max 0.038Ohm
Pulsed Drain Current-Max (IDM) 229A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 1706 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.62000 $14.62
10 $13.34000 $133.4
100 $11.42600 $1142.6
500 $9.83100 $4915.5
1,000 $9.06540 $9.0654
SIHG70N60EF-GE3 Product Details

SIHG70N60EF-GE3 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1706 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7500pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 70A amps.As far as peak drain current is concerned, its maximum pulsed current is 229A.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

SIHG70N60EF-GE3 Features


the avalanche energy rating (Eas) is 1706 mJ
a continuous drain current (ID) of 70A
based on its rated peak drain current 229A.
a 600V drain to source voltage (Vdss)


SIHG70N60EF-GE3 Applications


There are a lot of Vishay Siliconix
SIHG70N60EF-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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