FDMC8321L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMC8321L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
32.13mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
2.5MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 40W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
40W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.5m Ω @ 22A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3900pF @ 20V
Current - Continuous Drain (Id) @ 25°C
22A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
61nC @ 10V
Rise Time
6.1ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4.9 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
49A
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
22A
Drain to Source Breakdown Voltage
40V
Height
1.05mm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.274788
$0.274788
10
$0.259234
$2.59234
100
$0.244560
$24.456
500
$0.230717
$115.3585
1000
$0.217658
$217.658
FDMC8321L Product Details
FDMC8321L Description
FDMC8321L is a 40V N-Channel Power Trench? MOSFET. The onsemi N-Channel MOSFET FDMC8321L has been designed to improve overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMC8321L has been optimized for low gate charge, low rDS(on), and fast switching speed body diode reverse recovery performance.
FDMC8321L Features
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A
Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next Generation enhanced body diode technology, engineered for soft recovery