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FDMC8360L

FDMC8360L

FDMC8360L

ON Semiconductor

N-Channel Tape & Reel (TR) 2.1m Ω @ 27A, 10V ±20V 5795pF @ 20V 80nC @ 10V 8-PowerWDFN

SOT-23

FDMC8360L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 152.7mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5795pF @ 20V
Current - Continuous Drain (Id) @ 25°C 27A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 27A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 294 mJ
Height 750μm
Length 3.4mm
Width 3.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.92070 $2.7621
6,000 $0.88660 $5.3196
FDMC8360L Product Details

FDMC8360L Description


FDMC8360L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 40V. The operating temperature of FDMC8360L is -55??C~150??C TJ and its maximum power dissipation is 2.3W Ta. The Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.



FDMC8360L Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 2.1 m|? at VGS = 10 V, ID = 27 A

  • Max rDS(on) = 3.1 m|? at VGS = 4.5 V, ID = 22 A

  • High performance technology for extremely low rDS(on)

  • Termination is Lead-free

  • 100% UIL Tested

  • RoHS Compliant



FDMC8360L Applications


  • DC-DC Merchant Power Supply


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