FDMC8882 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMC8882 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
200mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
14.3MOhm
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 18W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
18W
Case Connection
DRAIN
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14.3m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
945pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10.5A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
10.5A
Threshold Voltage
1.9V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
34A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
40A
Nominal Vgs
1.9 V
Height
750μm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.25234
$0.75702
6,000
$0.23606
$1.41636
15,000
$0.21978
$3.2967
30,000
$0.20838
$6.2514
FDMC8882 Product Details
FDMC8882 Description
FDMC8882 N-Channel MOSFET is designed specifically for battery charge or loads switching in cellular handsets and other applications. FDMC8882 MOSFET features low on-state resistance. FDMC8882 ON Semiconductor enables better performance in the application and is used in Power Management and load switching applications, for instance, Notebook Computers and Portable Battery Packs.