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FDME1023PZT

FDME1023PZT

FDME1023PZT

ON Semiconductor

FDME1023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDME1023PZT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Number of Pins 6
Weight 25.2mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ESD PROTECTION
Subcategory Other Transistors
Max Power Dissipation 1.4W
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 4.7 ns
Power - Max 600mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 142m Ω @ 2.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V
Rise Time 4.8ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 2.6A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -600 mV
Feedback Cap-Max (Crss) 75 pF
Height 500μm
Length 1.6mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.25245 $1.26225
10,000 $0.24310 $2.431
25,000 $0.23800 $5.95
FDME1023PZT Product Details

FDME1023PZT      Description

 

The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved.The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.


FDME1023PZT      Features

 

Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A

Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A

Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A

Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A

Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

Free from halogenated compounds and antimony oxides

HBM ESD protection level > 1600V (Note3)

RoHS Compliant


FDME1023PZT        Applications


This product is general usage and suitable for many different applications.

 

  





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