FDME1023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
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FDME1023PZT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Number of Pins
6
Weight
25.2mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
ESD PROTECTION
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.3W
Case Connection
DRAIN
Turn On Delay Time
4.7 ns
Power - Max
600mW
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
142m Ω @ 2.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
7.7nC @ 4.5V
Rise Time
4.8ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
2.6A
Threshold Voltage
-600mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
-600 mV
Feedback Cap-Max (Crss)
75 pF
Height
500μm
Length
1.6mm
Width
1.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.25245
$1.26225
10,000
$0.24310
$2.431
25,000
$0.23800
$5.95
FDME1023PZT Product Details
FDME1023PZT Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved.The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.
FDME1023PZT Features
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A
Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (Note3)
RoHS Compliant
FDME1023PZT Applications
This product is general usage and suitable for many different applications.