SI1902CDL-T1-GE3

new-10%

Manufacturer part number:SI1902CDL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 1A DUAL NCH

Case Package:SOT-23

Datasheet:SI1902CDL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	235mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Max Power Dissipation	420mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	4 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	235m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	62pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.1A
Gate Charge (Qg) (Max) @ Vgs	3nC @ 10V
Rise Time	13ns
Fall Time (Typ)	9 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	1A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free