FDMS3602S                Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

FDMS3602S                   Features

Q1: N-Channel

Max RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A

Max RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A

Q2: N-Channel

Max RDS(on) = 2.2 mΩ at VGS = 10 V, ID= 26 A

Max RDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A

Low-inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant    

FDMS3602S             Applications

This product is general usage and suitable for many different applications.