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FDMS3668S

  • FDMS3668S
  • FDMS3668S

FDMS3668S

FDMS3668S

ON Semiconductor

FDMS3668S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMS3668S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 171mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Form FLAT
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
Turn On Delay Time 7.7 ns
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A 18A
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 13A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 70 pF
Height 1.1mm
Length 5mm
Width 5.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.489440 $10.48944
10 $9.895698 $98.95698
100 $9.335564 $933.5564
500 $8.807136 $4403.568
1000 $8.308619 $8308.619
FDMS3668S Product Details

FDMS3668S        Description


  The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.


FDMS3668S     Features

 

Q1: N-Channel

Max rDS(on) = 8 m|? at VGS = 10 V, ID = 13 A

Max rDS(on) = 11 m|? at VGS = 4.5 V, ID = 11 A

Q2: N-Channel

Max rDS(on) = 5 m|? at VGS = 10 V, ID = 18 A

Max rDS(on) = 5.2 m|? at VGS = 4.5 V, ID = 17 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switching node ringing

RoHS Compliant


FDMS3668S            Applications

Notebook PC

 



 



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